Issue Browser
Volume 15, Issue 11,
Nov 1994
Chin. J. Semicond.
1994, 15(11): 727-736
Chin. J. Semicond.
1994, 15(11): 737-740
Chin. J. Semicond.
1994, 15(11): 741-746
Chin. J. Semicond.
1994, 15(11): 747-753
Chin. J. Semicond.
1994, 15(11): 759-761
在Si(001)-2×1表面上沉積堿金屬K,接著在室溫下吸附一定量的H2O,光電子譜證明:K的存在有促進H2O分解和使Si氧化的作用.但其作用是局域在K原子附近的.
Chin. J. Semicond.
1994, 15(11): 768-773
Chin. J. Semicond.
1994, 15(11): 774-781
Chin. J. Semicond.
1994, 15(11): 790-794


