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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1657-1660

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Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

Liu Hongbo, Zhao Lingjuan, Kan Qiang, Pan Jiaoqing, Wang Lu, Zhu Hongliang, Zhou Fan and Wang Wei

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Abstract: This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing (QWI) for the first time in mainland China.The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA.The device can work at available channels with SMSR over 35dB.

Key words: tunable laser, semiconductor-optical-amplifier, ion implantation, quantum-well intermixing

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    Received: 18 August 2015 Revised: 28 April 2008 Online: Published: 01 September 2008

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      Liu Hongbo, Zhao Lingjuan, Kan Qiang, Pan Jiaoqing, Wang Lu, Zhu Hongliang, Zhou Fan, Wang Wei. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. Journal of Semiconductors, 2008, 29(9): 1657-1660. ****Liu H B, Zhao L J, Kan Q, Pan J Q, Wang L, Zhu H L, Zhou F, Wang W. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. J. Semicond., 2008, 29(9): 1657.
      Citation:
      Liu Hongbo, Zhao Lingjuan, Kan Qiang, Pan Jiaoqing, Wang Lu, Zhu Hongliang, Zhou Fan, Wang Wei. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. Journal of Semiconductors, 2008, 29(9): 1657-1660. ****
      Liu H B, Zhao L J, Kan Q, Pan J Q, Wang L, Zhu H L, Zhou F, Wang W. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. J. Semicond., 2008, 29(9): 1657.

      Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-01
      • Revised Date: 2008-04-28
      • Published Date: 2008-09-03

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