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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1661-1665

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Ohmic Contacts to n-Type Al0.6Ga0.4N for Solar-Blind Detectors

Zhu Yanling, Du Jiangfeng, Luo Muchang, Zhao Hong, Zhao Wenbo, Huang Lieyun, Ji Hong, Yu Qi and Yang Mohua

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Abstract: We investigate the contact characteristics of bi-layer thin films,Ti(20nm)/Al(200nm) on Si-doped n-type Al0.6Ga0.4N films grown on sapphire substrate.The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient.High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared.A specific contact resistivity ρc was determined using the circular transmission line method via current-voltage measurements.A ρc of 3.42E-4 Ω·cm2 was achieved when annealed at 670℃ for 90s.Then,this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p-i-n detectors and the detectors’ performances,such as spectral responsivity,dark-current,and breakdown voltage were optimized.

Key words: high-Al content n-AlGaN, ohmic contact, anneal, back-illumination, solar-blind p-i-n detector

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    Received: 18 August 2015 Revised: 07 May 2008 Online: Published: 01 September 2008

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      Zhu Yanling, Du Jiangfeng, Luo Muchang, Zhao Hong, Zhao Wenbo, Huang Lieyun, Ji Hong, Yu Qi, Yang Mohua. Ohmic Contacts to n-Type Al0.6Ga0.4N for Solar-Blind Detectors[J]. Journal of Semiconductors, 2008, 29(9): 1661-1665. ****Zhu Y L, Du J F, Luo M C, Zhao H, Zhao W B, Huang L Y, Ji H, Yu Q, Yang M H. Ohmic Contacts to n-Type Al0.6Ga0.4N for Solar-Blind Detectors[J]. J. Semicond., 2008, 29(9): 1661.
      Citation:
      Zhu Yanling, Du Jiangfeng, Luo Muchang, Zhao Hong, Zhao Wenbo, Huang Lieyun, Ji Hong, Yu Qi, Yang Mohua. Ohmic Contacts to n-Type Al0.6Ga0.4N for Solar-Blind Detectors[J]. Journal of Semiconductors, 2008, 29(9): 1661-1665. ****
      Zhu Y L, Du J F, Luo M C, Zhao H, Zhao W B, Huang L Y, Ji H, Yu Q, Yang M H. Ohmic Contacts to n-Type Al0.6Ga0.4N for Solar-Blind Detectors[J]. J. Semicond., 2008, 29(9): 1661.

      Ohmic Contacts to n-Type Al0.6Ga0.4N for Solar-Blind Detectors

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • Chongqing Optoelectronics Research Institute,Chongqing 400060,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-03-26
      • Revised Date: 2008-05-07
      • Published Date: 2008-09-03

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