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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1654-1656

LETTERS

A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

Chen Zhigang, Zhang Yang, Luo Weijun, Zhang Renping, Yang Fuhua, Wang Xiaoliang and Li Jinmin

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Abstract: We propose and fabricate an AlGaN/GaN high electron mobility transistor (HEMT) on sapphire substrate using a new kind of electron beam (EB) lithography layout for the T-gate.Using this new layout,we can change the aspect ratio (ratio of top gate dimension to gate length) and modify the shape of the T-gate freely.Therefore,we obtain a 0.18μm gate-length AlGaN/GaN HEMT with a unity current gain cutoff frequency (fT) of 65GHz.The aspect ratio of the T-gate is 10.These single finger devices also exhibit a peak extrinsic transconductance of 287mS/mm and a maximum drain current as high as 980mA/mm.

Key words: GaN, HEMT, T-gate, layout

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    Received: 18 August 2015 Revised: 23 April 2008 Online: Published: 01 September 2008

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      Chen Zhigang, Zhang Yang, Luo Weijun, Zhang Renping, Yang Fuhua, Wang Xiaoliang, Li Jinmin. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. Journal of Semiconductors, 2008, 29(9): 1654-1656. ****Chen Z G, Zhang Y, Luo W J, Zhang R P, Yang F H, Wang X L, Li J M. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. J. Semicond., 2008, 29(9): 1654.
      Citation:
      Chen Zhigang, Zhang Yang, Luo Weijun, Zhang Renping, Yang Fuhua, Wang Xiaoliang, Li Jinmin. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. Journal of Semiconductors, 2008, 29(9): 1654-1656. ****
      Chen Z G, Zhang Y, Luo W J, Zhang R P, Yang F H, Wang X L, Li J M. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. J. Semicond., 2008, 29(9): 1654.

      A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

      • State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-02-29
      • Revised Date: 2008-04-23
      • Published Date: 2008-09-03

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