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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1823-1826

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Monolithic Integrated Switches and Logic Control Circuits with E/D-Mode GaAs PHEMTs

Li Ming, Zhang Haiying, Xu Jingbo and Fu Xiaojun

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Abstract: This paper introduces the fabrication process and circuit design method for microwave monolithic integrated GaAs PHEMT switches and logic control circuits.Using 0.8μm GaAs E/D PHEMT technology,an integrated SPDT switch MMIC is fabricated.In the DC~10GHz,the insertion loss is less than 1.6dB,and the isolation is greater than 24dB.The logic circuits are integrated with the switch circuit successfully.The whole circuit only needs one control signal for voltage,reducing the port number of control circuit switches and saving chip area.

Key words: E/D PHEMT,  logic control circuits,  SPDT,  inverter

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    Received: 18 August 2015 Revised: 02 April 2008 Online: Published: 01 September 2008

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      Li Ming, Zhang Haiying, Xu Jingbo, Fu Xiaojun. Monolithic Integrated Switches and Logic Control Circuits with E/D-Mode GaAs PHEMTs[J]. Journal of Semiconductors, 2008, 29(9): 1823-1826. ****Li M, Zhang H Y, Xu J B, Fu X J. Monolithic Integrated Switches and Logic Control Circuits with E/D-Mode GaAs PHEMTs[J]. J. Semicond., 2008, 29(9): 1823.
      Citation:
      Li Ming, Zhang Haiying, Xu Jingbo, Fu Xiaojun. Monolithic Integrated Switches and Logic Control Circuits with E/D-Mode GaAs PHEMTs[J]. Journal of Semiconductors, 2008, 29(9): 1823-1826. ****
      Li M, Zhang H Y, Xu J B, Fu X J. Monolithic Integrated Switches and Logic Control Circuits with E/D-Mode GaAs PHEMTs[J]. J. Semicond., 2008, 29(9): 1823.

      Monolithic Integrated Switches and Logic Control Circuits with E/D-Mode GaAs PHEMTs

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

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      國(guó)家重點(diǎn)基礎(chǔ)研究規(guī)劃資助項(xiàng)目:“新結(jié)構(gòu)InP基HEMT器件和E/D型HEMT電路”(No. 2002CB311901)

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-29
      • Revised Date: 2008-04-02
      • Published Date: 2008-09-03

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