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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1783-1785

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X-Band Internally-Matched GaN HEMTs

Wang Yong, Li Jingqiang, Zhang Zhiguo, Feng Zhen, Song Jianbo, Feng Zhihong, Cai Shujun and Yang Kewu

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Abstract: With a self-developed GaN HEMT,the magnitude of leakage current between gate and drain is reduced to 1E-6A,the breakdown voltage is increased effectively,and the operating characteristic is improved.An MIS-GaN HEMT with 2.5mm gate-width is fabricated.When the operation voltage is 33V,the resultant device delivers a saturation output power of 18.2W,a power gain of 7.6dB,and a peak power added efficiency of 43.0% at a frequency of 8GHz CW.The internally-matched GaN HEMTs with a total gate-width of 2.5mm×4 deliver a saturation output power of 64.5W,a power gain of 7.2dB,and a power added efficiency of 39% at a frequency of 8GHz CW.

Key words: GaN HEMT, internal matching, output power, power gain, power added efficiency

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    Received: 18 August 2015 Revised: 05 May 2008 Online: Published: 01 September 2008

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      Wang Yong, Li Jingqiang, Zhang Zhiguo, Feng Zhen, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu. X-Band Internally-Matched GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(9): 1783-1785. ****Wang Y, Li J Q, Zhang Z G, Feng Z, Song J B, Feng Z H, Cai S J, Yang K W. X-Band Internally-Matched GaN HEMTs[J]. J. Semicond., 2008, 29(9): 1783.
      Citation:
      Wang Yong, Li Jingqiang, Zhang Zhiguo, Feng Zhen, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu. X-Band Internally-Matched GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(9): 1783-1785. ****
      Wang Y, Li J Q, Zhang Z G, Feng Z, Song J B, Feng Z H, Cai S J, Yang K W. X-Band Internally-Matched GaN HEMTs[J]. J. Semicond., 2008, 29(9): 1783.

      X-Band Internally-Matched GaN HEMTs

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • School of Microelectronics,Xidian University,Xi'an 710071,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-03-13
      • Revised Date: 2008-05-05
      • Published Date: 2008-09-03

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