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Abstract: SiC nanowires are successfully synthesized via multiple VS reactions using silicon chips,graphite,and SiO2 powder as raw materials.XRD results identify the product as a cubic β-SiC structure.SEM and TEM images show that the diameter of the SiC nanowires is in the range of 30~50nm and length is up to tens of microns,even over one hundred microns.HRTEM analysis indicates single crystalline β-SiC nanowires with a main growth direction of [111].According to a series of experiments,a mechanism of multiple VS reactions is proposed to explain the formation of SiC nanowires.
Key words: SiC nanowires, multiple VS reactions, mechanism
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Received: 18 August 2015 Revised: 07 April 2008 Online: Published: 01 September 2008
| Citation: |
Li Jialin, Tang Yuanhong, Li Xiaoxiang, Li Xiaochuan. Synthesis of SiC Nanowires via Multiple VS Reactions[J]. Journal of Semiconductors, 2008, 29(9): 1786-1789.
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Li J L, Tang Y H, Li X X, Li X C. Synthesis of SiC Nanowires via Multiple VS Reactions[J]. J. Semicond., 2008, 29(9): 1786.
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