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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1779-1782

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Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal

Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji and Gao Yongliang

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Abstract: Using the laser scattering method to measure a polished GaAs wafer,we find that there are four aggregation centers of arsenide precipitation in a GaAs crystal grown in a special thermal field［1］ and the aggregation centers are at precisely the positions where the dislocation density is at a minimum.In this article,we examine the correlation between the precipitation distribution of arsenide and the dislocations.We also explain what leads to the formation of the four arsenide precipitation aggregation centers and their special distribution.

Key words: gallium arsenide, LEC, arsenide precipitation, micro-defects, dislocation distribution

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    Received: 18 August 2015 Revised: 28 March 2008 Online: Published: 01 September 2008

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      Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji, Gao Yongliang. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. Journal of Semiconductors, 2008, 29(9): 1779-1782. ****Zhu R H, Zeng Y P, Bu J P, Hui F, Zheng H J, Zhao J, Gao Y L. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. J. Semicond., 2008, 29(9): 1779.
      Citation:
      Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji, Gao Yongliang. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. Journal of Semiconductors, 2008, 29(9): 1779-1782. ****
      Zhu R H, Zeng Y P, Bu J P, Hui F, Zheng H J, Zhao J, Gao Y L. Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal[J]. J. Semicond., 2008, 29(9): 1779.

      Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Materials Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-12-14
      • Revised Date: 2008-03-28
      • Published Date: 2008-09-03

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