Abstract: 3C-SiC film was hetero-epitaxial grown on 6H-SiC substrate by the low temperature hot wall chemical vapor deposition method at 1250℃,using SiH4 and C3H8 as gas sources.Results of scanning electron microscopy and atomic force microscopy show that the sample's surface is smooth without a visible island structure.The image of the cross-section transmission electron microscopy shows that the compact and uniform SiC epi-layer has a flat interface,and its thickness is about 50nm.High-resolution transmission electron microscopy shows that the substrate and epi-layer are well-arranged 6H-SiC and 3C-SiC structures,respectively,with a smooth transition and no polytype in the junction.The selected area electron diffraction pattern also shows that the epi-layer is 3C-SiC film with a zinc blende structure,and the calculated lattice constant is 0.4362nm.

Key words: SiC,  chemical vapour deposition,  hetero-epitaxial,  transmission electron microscopy