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J. Semicond. > 2008, Volume 29?>?Issue 5?> 940-943

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Growth and Characteristics of ZnTe Single Crystal for THz Technology

Wang Reng, Fang Weizheng, Zhao Pei, Zhang Lei, Ge Jin, Yuan Shixin, Zhang Huier, Hu Shuhong, Dai Ning, Chen Xiaoshu, Wu Xiaojun, He Shan and Wang Gang

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Abstract: ZnTe single crystals were grown perfectly by employing the Te-solution method.X-ray diffraction was introduced to investigate the crystals,and 〈110〉 oriented crystals of 10mm×10mm size were obtained.The transmittance is about 61% in range of 2.5 ~20mm,as measured with a Fourier Transform Infrared spectrometer.The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24eV.Moreover,a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti:sapphire amplifier system.The THz radiation signal has a pulse width of about 0.18ps and frequency bandwidth of 5THz.

Key words: Te-solution method, ZnTe crystal, X-ray diffraction, THz

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    Received: 18 August 2015 Revised: 02 November 2007 Online: Published: 01 May 2008

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      Wang Reng, Fang Weizheng, Zhao Pei, Zhang Lei, Ge Jin, Yuan Shixin, Zhang Huier, Hu Shuhong, Dai Ning, Chen Xiaoshu, Wu Xiaojun, He Shan, Wang Gang. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. Journal of Semiconductors, 2008, 29(5): 940-943. ****Wang R, Fang W Z, Zhao P, Zhang L, Ge J, Yuan S X, Zhang H E, Hu S H, Dai N, Chen X S, Wu X J, He S, Wang G. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. J. Semicond., 2008, 29(5): 940.
      Citation:
      Wang Reng, Fang Weizheng, Zhao Pei, Zhang Lei, Ge Jin, Yuan Shixin, Zhang Huier, Hu Shuhong, Dai Ning, Chen Xiaoshu, Wu Xiaojun, He Shan, Wang Gang. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. Journal of Semiconductors, 2008, 29(5): 940-943. ****
      Wang R, Fang W Z, Zhao P, Zhang L, Ge J, Yuan S X, Zhang H E, Hu S H, Dai N, Chen X S, Wu X J, He S, Wang G. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. J. Semicond., 2008, 29(5): 940.

      Growth and Characteristics of ZnTe Single Crystal for THz Technology

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China

      • State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China

      • State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China

      • State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-05
      • Revised Date: 2007-11-02
      • Published Date: 2008-05-05

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