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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1377-1382

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Effect of Trapped Charges on GMLM Pull-Out Voltage

Zhang Jie, Huang Shanglian, Sun Jiyong, Zhang Zhihai and Zhu Yong

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Abstract: A grating moving light modulator (GMLM) modulates light energy by changing the distance of the movable grating and the underlying fixed reflector.The dielectric material SiO2 provides trap sites for charges both in the volume and the surface in high electric field,which will affect GMLM driving characteristic.With Gauss theory,the electrodynamic model is set up.The distribution of trapped charges and the relationship between the displacement of movable grating and applied voltage are analyzed in detail An experimental scheme is designed.The experiment indicates that increasing the applied voltage achieves the same displacement due to the influence of trapped charges,a longer charge time,and a bigger offset voltage,which is consistent with theoretical analysis.

Key words: grating, trapped charges, pull-out voltage

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    Received: 18 August 2015 Revised: 16 March 2008 Online: Published: 01 July 2008

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      Zhang Jie, Huang Shanglian, Sun Jiyong, Zhang Zhihai, Zhu Yong. Effect of Trapped Charges on GMLM Pull-Out Voltage[J]. Journal of Semiconductors, 2008, 29(7): 1377-1382. ****Zhang J, Huang S L, Sun J Y, Zhang Z H, Zhu Y. Effect of Trapped Charges on GMLM Pull-Out Voltage[J]. J. Semicond., 2008, 29(7): 1377.
      Citation:
      Zhang Jie, Huang Shanglian, Sun Jiyong, Zhang Zhihai, Zhu Yong. Effect of Trapped Charges on GMLM Pull-Out Voltage[J]. Journal of Semiconductors, 2008, 29(7): 1377-1382. ****
      Zhang J, Huang S L, Sun J Y, Zhang Z H, Zhu Y. Effect of Trapped Charges on GMLM Pull-Out Voltage[J]. J. Semicond., 2008, 29(7): 1377.

      Effect of Trapped Charges on GMLM Pull-Out Voltage

      • Key Laboratory for Opto-Eletronic Technology & System,Education Ministry of China,Opto-Electronic Engineering Department,Chongqing University,Chongqing 400030,China

      • Key Laboratory for Opto-Eletronic Technology & System,Education Ministry of China,Opto-Electronic Engineering Department,Chongqing University,Chongqing 400030,China

      • Key Laboratory for Opto-Eletronic Technology & System,Education Ministry of China,Opto-Electronic Engineering Department,Chongqing University,Chongqing 400030,China

      • Key Laboratory for Opto-Eletronic Technology & System,Education Ministry of China,Opto-Electronic Engineering Department,Chongqing University,Chongqing 400030,China

      • Key Laboratory for Opto-Eletronic Technology & System,Education Ministry of China,Opto-Electronic Engineering Department,Chongqing University,Chongqing 400030,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-19
      • Revised Date: 2008-03-16
      • Published Date: 2008-08-01

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