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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1373-1376

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60GHz Wideband LNA MMIC with High Gain

Hou Yang, Zhang Jian, Li Lingyun and Sun Xiaowei

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Abstract: A wideband low noise amplifier (LNA) MMIC was designed and fabricated with 0.15μm GaAs pHEMT process.It obtains high gain by means of adopting four stages topology.The chip size is 2mm×1mm.Covering 45~65GHz,it achieves a maximum 20.5dB gain and low VSWR.It has the advantages of higher gain,wider bandwidth and lower power consuming.This chip can be widely applied in 60GHz wideband wireless communication system.

Key words: pHEMT, MMIC, LNA, 60GHz

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    Received: 18 August 2015 Revised: 18 February 2008 Online: Published: 01 July 2008

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      Hou Yang, Zhang Jian, Li Lingyun, Sun Xiaowei. 60GHz Wideband LNA MMIC with High Gain[J]. Journal of Semiconductors, 2008, 29(7): 1373-1376. ****Hou Y, Zhang J, Li L Y, Sun X W. 60GHz Wideband LNA MMIC with High Gain[J]. J. Semicond., 2008, 29(7): 1373.
      Citation:
      Hou Yang, Zhang Jian, Li Lingyun, Sun Xiaowei. 60GHz Wideband LNA MMIC with High Gain[J]. Journal of Semiconductors, 2008, 29(7): 1373-1376. ****
      Hou Y, Zhang J, Li L Y, Sun X W. 60GHz Wideband LNA MMIC with High Gain[J]. J. Semicond., 2008, 29(7): 1373.

      60GHz Wideband LNA MMIC with High Gain

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-09
      • Revised Date: 2008-02-18
      • Published Date: 2008-08-01

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