Abstract: Two types of variable-area photovoltaic detectors passivated by single ZnS layer and dual (CdTe/ZnS) layers have been fabricated on the same HgCdTe wafer.Through analyzing the current-voltage curves,the relation between the product of zero-bias resistance and area (R0A),and the ratio of perimeter and area (p/A) of the two types of detectors,it was found that the detectors passivated by ZnS had a significant surface leakage current.Through analyzing the relation of current noise and dark current,it was found the noise of detectors passivated by ZnS was close to shot noise,and the detectors passivated by CdTe/ZnS showed an obvious basic 1/f noise characterization,which caused lower noise than detectors passivated by ZnS.

Key words: passivation, variable-area,  shot noise, 1/f noise, photovoltaic detector, HgCdTe