Chin. J. Semicond. > 1994, Volume 15?>?Issue 9?> 596-602

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布里茲曼法碲鎘汞（Hg1－xCdxTe）晶體生長過程熱場的數值分析

王培林，魏科，周士仁

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1994

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      王培林，魏科，周士仁. 布里茲曼法碲鎘汞（Hg1－xCdxTe）晶體生長過程熱場的數值分析[J]. 半導體學報(英文版), 1994, 15(9): 596-602.
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      王培林，魏科，周士仁. 布里茲曼法碲鎘汞（Hg1－xCdxTe）晶體生長過程熱場的數值分析[J]. 半導體學報(英文版), 1994, 15(9): 596-602.

      • Received Date: 2015-08-19

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