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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1790-1793

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A Guide System in φ200mm CZ-Si Growth

Ren Bingyan, Chu Shijun, Wu Xin, Yu Jianxiu and Sun Xiuju

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Abstract: By modifying the guide system,with the help of the numerical simulation,the argon flow field and the total thermal field are obtained.We find that using the guide shell and the cooling cover improves the argon flow field,the solid-liquid interface,and the temperature gradient.It is good for the emanatory of crystallization latent heat and the improvement of the radical resistivity in the crystal.It also clarifies the mechanism of the improvement of the temperature gradient and the crystallization latent heat emanation velocity by improving the guide system.

Key words: numerical simulation, CZ-Si, crystallization latent heat, guide shell

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    Received: 18 August 2015 Revised: 02 June 2008 Online: Published: 01 September 2008

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      Ren Bingyan, Chu Shijun, Wu Xin, Yu Jianxiu, Sun Xiuju. A Guide System in φ200mm CZ-Si Growth[J]. Journal of Semiconductors, 2008, 29(9): 1790-1793. ****Ren B Y, Chu S J, Wu X, Yu J X, Sun X J. A Guide System in φ200mm CZ-Si Growth[J]. J. Semicond., 2008, 29(9): 1790.
      Citation:
      Ren Bingyan, Chu Shijun, Wu Xin, Yu Jianxiu, Sun Xiuju. A Guide System in φ200mm CZ-Si Growth[J]. Journal of Semiconductors, 2008, 29(9): 1790-1793. ****
      Ren B Y, Chu S J, Wu X, Yu J X, Sun X J. A Guide System in φ200mm CZ-Si Growth[J]. J. Semicond., 2008, 29(9): 1790.

      A Guide System in φ200mm CZ-Si Growth

      • School of Material Science and Engineering,Hebei University of Technology,Tianjin 300130,China

      • School of Material Science and Engineering,Hebei University of Technology,Tianjin 300130,China

      • School of Material Science and Engineering,Hebei University of Technology,Tianjin 300130,China

      • School of Material Science and Engineering,Hebei University of Technology,Tianjin 300130,China

      • School of Material Science and Engineering,Hebei University of Technology,Tianjin 300130,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-03-14
      • Revised Date: 2008-06-02
      • Published Date: 2008-09-03

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