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J. Semicond. > 2008, Volume 29?>?Issue 3?> 478-483

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Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation

Sun Ling and Yang Steve

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Abstract: A new process for gate dielectric fabrication named in situ steam generation (ISSG) is reported.Based on the Deal-Grove model,an oxidation mechanism is proposed to break the Si-Si bond by an active atomic O and form a Si-O-Si bond during the oxidation process.The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation.The gate dielectric material generated by ISSG oxidation has a superior electrical performance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising application in sub-micron IC device manufacturing.

Key words: ISSG, gate dielectric, breakdown

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    Received: 18 August 2015 Revised: 24 October 2007 Online: Published: 01 March 2008

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      Sun Ling, Yang Steve. Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation[J]. Journal of Semiconductors, 2008, 29(3): 478-483. ****Sun L, Yang S. Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation[J]. J. Semicond., 2008, 29(3): 478.
      Citation:
      Sun Ling, Yang Steve. Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation[J]. Journal of Semiconductors, 2008, 29(3): 478-483. ****
      Sun L, Yang S. Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation[J]. J. Semicond., 2008, 29(3): 478.

      Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050,China

      • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,Chin

      • Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-19
      • Revised Date: 2007-10-24
      • Published Date: 2008-02-28

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