Abstract: Peroxodiphosphate anion (a powerful oxidant) can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes.This electrochemical reaction was applied during the oxidation,decomposition,and removal of organic contaminations on a silicon wafer surface,and it was used as the first step in the diamond electrochemical cleaning technique (DECT).The cleaning effects of DECT were compared with the RCA cleaning technique,including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy.The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique.

Key words: organic contaminations, silicon wafer surface cleaning, boron-doped diamond electrodes, powerful oxidant, micro-roughness, electrochemical cleaning