J. Semicond. > 2016, Volume 37?>?Issue 7?> 074008

SEMICONDUCTOR DEVICES

Metal-to-metal antifuse with low programming voltage and low on-state resistance

Yang Jiang, Min Tian, Huang Long, Jie Zhao, Shuai Chen and Huicai Zhong

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 Corresponding author: Jiang Yang,Email: jiangyang@ime.ac.cn

DOI: 10.1088/1674-4926/37/7/074008

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Abstract: This paper describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the Al-HfO2-Al antifuse. The programming voltage of the antifuse with 120 ? HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance (~19 Ω) and low programming voltage (4.6 V) is demonstrated in the embedded Ti antifuse with 120 ? HfO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.

Key words: antifuse, embedded Ti layer, lower programming voltage, HfO2



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.  (Color online) Cross-section of the metal-to-metal antifuses. Both of the devices have 120 ? HfO2 as insulator grown by ALD. (a) With embedded 100 ? Ti layer and 200 ? TiN. (b) Without embedded Ti layer, but with 300 ? TiN.

.  Typical I–V characteristic of unprogrammed antifuses.

.  Breakdown voltage distribution for antifuse at temperature of 25 ℃.

.  Programmed antifuse resistance distribution.

.  Weibull distribution of the program time.

.  Leakage current per unprogrammed antifuse at 1.8 V as a function of ambient temperature.

.  (Color online) The process of the soft breakdown. (a) Insulator layer with intrinsic defect. (b) Defect generation under high field, and finally form a percolation path.

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    Received: 15 December 2015 Revised: Online: Published: 01 July 2016

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      Yang Jiang, Min Tian, Huang Long, Jie Zhao, Shuai Chen, Huicai Zhong. Metal-to-metal antifuse with low programming voltage and low on-state resistance[J]. Journal of Semiconductors, 2016, 37(7): 074008. doi: 10.1088/1674-4926/37/7/074008 ****Y Jiang, M Tian, H Long, J Zhao, S Chen, H C Zhong. Metal-to-metal antifuse with low programming voltage and low on-state resistance[J]. J. Semicond., 2016, 37(7): 074008. doi: 10.1088/1674-4926/37/7/074008.
      Citation:
      Yang Jiang, Min Tian, Huang Long, Jie Zhao, Shuai Chen, Huicai Zhong. Metal-to-metal antifuse with low programming voltage and low on-state resistance[J]. Journal of Semiconductors, 2016, 37(7): 074008. doi: 10.1088/1674-4926/37/7/074008 ****
      Y Jiang, M Tian, H Long, J Zhao, S Chen, H C Zhong. Metal-to-metal antifuse with low programming voltage and low on-state resistance[J]. J. Semicond., 2016, 37(7): 074008. doi: 10.1088/1674-4926/37/7/074008.

      Metal-to-metal antifuse with low programming voltage and low on-state resistance

      DOI: 10.1088/1674-4926/37/7/074008

      • Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

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      • Corresponding author: Jiang Yang,Email: jiangyang@ime.ac.cn
      • Received Date: 2015-12-15
      • Accepted Date: 2016-02-01
      • Published Date: 2016-07-25

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