J. Semicond. > 2016, Volume 37?>?Issue 7?> 074009

SEMICONDUCTOR DEVICES

Simulation and fabrication of thin film bulk acoustic wave resonator

Xixi Han, Yi Ou, Zhigang Li, Wen Ou, Dapeng Chen and Tianchun Ye

+ Author Affiliations

 Corresponding author: Ou Yi, Email: ouyi@ime.ac.cn

DOI: 10.1088/1674-4926/37/7/074009

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Abstract: In this paper, we present the simulation and fabrication of a thin film bulk acoustic resonator (FBAR). In order to improve the accuracy of simulation, an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration. The resonators were fabricated by the eight inch CMOS process, and the measurements show that the improved Mason model is more accurate than a simple Mason model. The Qs (Q at series resonance), Qp (Q at parallel resonance), Qmax and kt2 of the FBAR were measured to be 695, 814, 1049, and 7.01% respectively, showing better performance than previous reports.

Key words: FBAR, resonator, improved Mason model, surface micromachining processes



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.  (Color online) (a) Cross section of FBAR stack with aluminum nitride layer sandwiched in between molybdenum layers. (b) SMR stack with high and low impedance layer.

.  Mason model of an FBAR. (a) Simple Mason model. (b) Improved Mason model. $C_{\rm coup}$ represents the coupling effect between electrode and substrate.

.  (Color online) Fabrication process of FBAR filters. (a) Sacrificial layer etch. (b) Sacrificial layer deposition and CMP. (c) Seed layer deposition. (d) Bottom electrode deposition and patterning. (e) Piezoelectric layer deposition, top electrode deposition and patterning. (f) Via etching. (g) Metalation of electrode. (h) Releasing of sacrificial layer.

.  (Color online) (a) Four resonators. (b) From bottom to up, FBAR stack includes seed layer, bottom electric, piezoelectric layer, top electric and passivation layer. (c) FBAR resonator. The air gap provides an acoustic impedance mismatch thus keeping most of the acoustic energy inside the sandwich.

.  S-parameter plotted on a Smith chart. (a) Simple Mason model results versus measurement results. (b) Improved Mason model results versus measurement results.

.   Comparison of these two models results with measurement result.
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    Received: 21 December 2015 Revised: Online: Published: 01 July 2016

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      Xixi Han, Yi Ou, Zhigang Li, Wen Ou, Dapeng Chen, Tianchun Ye. Simulation and fabrication of thin film bulk acoustic wave resonator[J]. Journal of Semiconductors, 2016, 37(7): 074009. doi: 10.1088/1674-4926/37/7/074009 ****X X Han, Y Ou, Z G Li, W Ou, D P Chen, T C Ye. Simulation and fabrication of thin film bulk acoustic wave resonator[J]. J. Semicond., 2016, 37(7): 074009. doi: 10.1088/1674-4926/37/7/074009.
      Citation:
      Xixi Han, Yi Ou, Zhigang Li, Wen Ou, Dapeng Chen, Tianchun Ye. Simulation and fabrication of thin film bulk acoustic wave resonator[J]. Journal of Semiconductors, 2016, 37(7): 074009. doi: 10.1088/1674-4926/37/7/074009 ****
      X X Han, Y Ou, Z G Li, W Ou, D P Chen, T C Ye. Simulation and fabrication of thin film bulk acoustic wave resonator[J]. J. Semicond., 2016, 37(7): 074009. doi: 10.1088/1674-4926/37/7/074009.

      Simulation and fabrication of thin film bulk acoustic wave resonator

      DOI: 10.1088/1674-4926/37/7/074009

      • Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Microelectronics Devices and Integrated Technology Beijing 100029, China

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      • Corresponding author: Ou Yi, Email: ouyi@ime.ac.cn
      • Received Date: 2015-12-21
      • Accepted Date: 2016-01-27
      • Published Date: 2016-07-25

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