J. Semicond. > 2016, Volume 37?>?Issue 7?> 074007

SEMICONDUCTOR DEVICES

Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

Wei Ye1, Wei Ren1, , Peng Shi1 and Zhuangde Jiang2

+ Author Affiliations

 Corresponding author: Ren Wei, Email: wren@mail.xjtu.edu.cn

DOI: 10.1088/1674-4926/37/7/074007

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Abstract: The bottom-gate structure ZnO based thin film transistors (ZnO-TFTs) using Bi1.5Zn1.0Nb1.5O7 (BZN) thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400℃ obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10-7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400℃ are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300℃. When the annealing temperature is 400℃, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21×1012cm-2.

Key words: pyrochlore BZN thin films, ZnO-TFTs, RF magnetron sputtering, annealing temperature



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.  Cross-sectional schematic of ZnO-TFT, in which ZnO thin film is used as the channel layer, Ti/Au thin film is used as the source/drain electrode, BZN thin film is used as the gate insulator, and Pt layer is used as the gate electrode.

.  XRD patterns of BZN thin films.

.  AFM patterns of BZN thin films.

.  Surface roughness of BZN thin films deposited under different temperatures.

.  Dielectric properties of BZN thin films as a function of (a) frequency dependence and (b) annealing temperature measured at 1 MHz.

.  Capacitance density of BZN thin films as a function of (a) electric field measured at 1 MHz and (b) annealing temperature measured at 200 kV/cm.

.  Electric field dependence of leakage current for thin films derived from different annealing temperatures.

.  Output characteristics curves (IDS–VDS) of ZnO-TFTs with BZN gate insulator. (a) Annealed at 300 ℃ . (b) Annealed at 400 ℃ . (c) Annealed at 500 ℃ .

.  Transfer characteristics curves of ZnO-TFTs using BZN thin films as a gate insulator. (a) Drain-to-source current ( $I_{\rm DS}$ ) as a function of gate-to-source voltage ( $V_{\rm GS}$ ) of the ZnO-TFTs. (b) Square root of the drain current ( $I_{\rm DS}^{1/2})$ versus $V_{\rm GS}$ at the fixed drain voltage $V_{\rm DS}$ of 4~V for ZnO-TFTs.

.  Electrical characteristics of ZnO-TFTs as a function of annealing temperature. (a) Evolution of the threshold voltage ( $V_{\rm th}$ ) and the sub-threshold swing (SS). (b) Variation of the field effect mobility ( $\mu _{\rm FE}$ ) and surface states density ( $N_{\rm max}^{\rm SS}$ ). (c) Variation of the saturation current ( $I_{\rm DS}$ ) and on/off current ratio ( $I_{\rm on}$ / $I_{\rm off})$ .

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    Received: 21 September 2015 Revised: Online: Published: 01 July 2016

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      Wei Ye, Wei Ren, Peng Shi, Zhuangde Jiang. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors[J]. Journal of Semiconductors, 2016, 37(7): 074007. doi: 10.1088/1674-4926/37/7/074007 ****W Ye, W Ren, P Shi, Z D Jiang. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors[J]. J. Semicond., 2016, 37(7): 074007. doi: 10.1088/1674-4926/37/7/074007.
      Citation:
      Wei Ye, Wei Ren, Peng Shi, Zhuangde Jiang. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors[J]. Journal of Semiconductors, 2016, 37(7): 074007. doi: 10.1088/1674-4926/37/7/074007 ****
      W Ye, W Ren, P Shi, Z D Jiang. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors[J]. J. Semicond., 2016, 37(7): 074007. doi: 10.1088/1674-4926/37/7/074007.

      Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

      DOI: 10.1088/1674-4926/37/7/074007
      • 1.

        Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China

      • 2.

        State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China

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      • Corresponding author: Ren Wei, Email: wren@mail.xjtu.edu.cn
      • Received Date: 2015-09-21
      • Accepted Date: 2015-10-26
      • Published Date: 2016-07-25

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