J. Semicond. > 2015, Volume 36?>?Issue 9?> 094006

SEMICONDUCTOR DEVICES

Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure

Kai Han1, , Xiaolei Wang2 and Wenwu Wang2

+ Author Affiliations

 Corresponding author: Han Kai, hankai@wfu.edu.cn

DOI: 10.1088/1674-4926/36/9/094006

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Abstract: The physical origin of the flatband voltage (VFB) roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions.

Key words: high-k dielectric, band alignment, VFB roll off



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.  The schematic diagram of energy band structure for a metal/high-$k$/SiO$_{2}$/Si system.

Figure 1.


Fig. 2.  The $\Delta V_{\rm FB}$ roll off-EOT plots of the experimental and simulation results. The doping concentration of experimentally used n-Si substrate is 5 $\times$ 10$^{18}$ cm$^{-3}$.

Fig. 3.  The simulated $\Delta V_{\rm FB}$ roll off-EOT plot for different thicknesses of high-$k$ dielectric.

Fig. 4.  The simulated $\Delta V_{\rm FB}$ roll off-EOT plot for different types of high-$k$ dielectrics.

Fig. 5.  The simulated $\Delta V_{\rm FB}$ roll off-EOT plot for different doping type of Si substrate. The corresponding differences of the Fermi levels used in the simulation are simultaneously given.

Fig. 6.  The simulated $\Delta V_{\rm FB}$ roll off-EOT plot for different doping concentration of Si substrate. The corresponding differences of the Fermi levels used in the simulation are simultaneously given at the top of the figure.

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    Received: 08 May 2015 Revised: Online: Published: 01 September 2015

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      Kai Han, Xiaolei Wang, Wenwu Wang. Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure[J]. Journal of Semiconductors, 2015, 36(9): 094006. doi: 10.1088/1674-4926/36/9/094006 ****K Han, X L Wang, W W Wang. Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure[J]. J. Semicond., 2015, 36(9): 094006. doi: 10.1088/1674-4926/36/9/094006.
      Citation:
      Kai Han, Xiaolei Wang, Wenwu Wang. Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure[J]. Journal of Semiconductors, 2015, 36(9): 094006. doi: 10.1088/1674-4926/36/9/094006 ****
      K Han, X L Wang, W W Wang. Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure[J]. J. Semicond., 2015, 36(9): 094006. doi: 10.1088/1674-4926/36/9/094006.

      Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure

      DOI: 10.1088/1674-4926/36/9/094006
      • 1.

        Department of Physics and Electronic Science, Weifang University, Weifang 261061, China

      • 2.

        Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61404093) and the Doctoral Scientific Research Foundation of Weifang University (No. 014BS02).

      More Information
      • Corresponding author: Han Kai, hankai@wfu.edu.cn
      • Received Date: 2015-05-08
      • Accepted Date: 2015-06-19
      • Published Date: 2015-01-25

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