J. Semicond. > 2015, Volume 36?>?Issue 9?> 094007

SEMICONDUCTOR DEVICES

4500 V SPT+ IGBT optimization on static and dynamic losses

Qingyun Dai1, Xiaoli Tian2, Wenliang Zhang2, Shuojin Lu3 and Yangjun Zhu3,

+ Author Affiliations

 Corresponding author: Zhu Yangjun, zhuyangjun@ime.ac.cn

DOI: 10.1088/1674-4926/36/9/094007

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Abstract: This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor (HV IGBTs). A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through (SPT) concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT+ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT+ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop (Von) and turn-off loss (Eoff) in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT+ IGBT.

Key words: IGBT, SPT+, carrier stored layer, on-state voltage drop, turn-off loss, trade off characteristic



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Fig1.  The cross-section of (a) SPT IGBT and (b) SPT$^{+}$ IGBT.

Fig2.  Doping profile of field stop layer and anode.

Fig3.  The turn-off switching waveform of SPT structure.

Fig4.  Carrier distribution in SPT IGBT and SPT$^{ +}$ IGBT with different carrier stored layer doping dose.

Fig5.  On-state voltage drop of SPT IGBT and SPT$^{+}$ IGBT with different carrier stored layer doping doses.

Fig6.  Breakdown voltage of SPT IGBT and SPT$^{+}$ IGBT with different carrier stored layer doses.

Fig7.  (Color online) Electric field distribution in SPT$^{+}$ IGBT under forward blocking state.

Fig8.  Electric field of SPT$^{+}$ IGBT with different carrier stored layer doses under forward blocking state.

Fig9.  Turn-off switching waveform of SPT$^{+}$ IGBT.

Fig10.  Turn-off loss versus on-state voltage drop of a SPT IGBT and a SPT$^{+}$ IGBT ($I_{\rm ce}$ $=$ 40 A,$T=$ 300 K).

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    Received: 05 February 2015 Revised: Online: Published: 01 September 2015

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      Qingyun Dai, Xiaoli Tian, Wenliang Zhang, Shuojin Lu, Yangjun Zhu. 4500 V SPT+ IGBT optimization on static and dynamic losses[J]. Journal of Semiconductors, 2015, 36(9): 094007. doi: 10.1088/1674-4926/36/9/094007 ****Q Y Dai, X L Tian, W L Zhang, S J Lu, Y J Zhu. 4500 V SPT+ IGBT optimization on static and dynamic losses[J]. J. Semicond., 2015, 36(9): 094007. doi: 10.1088/1674-4926/36/9/094007.
      Citation:
      Qingyun Dai, Xiaoli Tian, Wenliang Zhang, Shuojin Lu, Yangjun Zhu. 4500 V SPT+ IGBT optimization on static and dynamic losses[J]. Journal of Semiconductors, 2015, 36(9): 094007. doi: 10.1088/1674-4926/36/9/094007 ****
      Q Y Dai, X L Tian, W L Zhang, S J Lu, Y J Zhu. 4500 V SPT+ IGBT optimization on static and dynamic losses[J]. J. Semicond., 2015, 36(9): 094007. doi: 10.1088/1674-4926/36/9/094007.

      4500 V SPT+ IGBT optimization on static and dynamic losses

      DOI: 10.1088/1674-4926/36/9/094007
      • 1.

        Jiangsu R&D Center for Internet of Things, Wuxi 214135, China

      • 2.

        Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • 3.

        Junshine CAS-IGBT Technology Co., Ltd, Wuxi 214135, China

      Funds:

      Project supported by the National Major Science and Technology Special Project of China (No. 2011ZX02504-002).

      More Information
      • Corresponding author: Zhu Yangjun, zhuyangjun@ime.ac.cn
      • Received Date: 2015-02-05
      • Accepted Date: 2015-03-31
      • Published Date: 2015-01-25

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