J. Semicond. > 2015, Volume 36?>?Issue 9?> 094005

SEMICONDUCTOR DEVICES

Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

Wen Fang1, 2, 3, , Eddy Simoen1, Chikang Li4, Marc Aoulaiche5, Jun Luo3, Chao Zhao3 and Cor Claeys1, 2

+ Author Affiliations

 Corresponding author: Fang Wen, fangwen@ime.ac.cn

DOI: 10.1088/1674-4926/36/9/094005

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Abstract: This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the silicon film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOI) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude ΔID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and supported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDS dependence of the switched source and drain is related to the lateral trap position along the source and drain.

Key words: random telegraph noise, low frequency noise, ultra-thin BOX, silicon-on-insulator, single charge trap



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Fig1.  TEM picture of the UTBOX SOI nMOSFET ($L_{\rm g}$ $=$ 65 nm).

Fig2.  The noise power spectral density from the front and back channel in linear operation region ($V_{\rm DS}$ $=$ 0.05 V) for the UTBOX SOI nMOSFET ($WL_{\rm g}$ $=$ 0.3 $\times$ 0.065 $\mu$m$^{2})$.

Fig3.  The time domain drain current in linear operation region ($V_{\rm DS}$ $=$ 0.05 V,$V_{\rm GS}$ $=$ $-0.2$ V and $V_{\rm GB}$ $=$ 1.5 V) for the UTBOX SOI nMOSFET ($WL_{\rm g}$ $=$ 0.3 $\times$ 0.065 $\mu $m$^{2})$.

Fig4.  Relative RTN amplitude versus gate voltage in linear operation for a set of $W=$ 1 $\mu $m UTBOX SOI nMOSFETs with different gate lengths (110,130,150,and 170 nm). The back-gate bias $V_{\rm GB}=$ 0 V.

Fig5.  Gate voltage dependence of the relative RTN amplitude as a function of the front-gate voltage in linear operation ($V_{\rm DS}$ $=$ 0.05 V) and for two different back-gate voltages for a $WL_{\rm g}$ $=$ 1 $\times$ 0.055 $\mu $m$^{2}$ UTBOX SOI nMOSFET.

Fig6.  Experimental data of the $V_{\rm D}$ dependence of the RTN relative amplitude for two UTBOX SOI nMOSFETs with $W=$ 0.3 $\mu $m $L_{\rm g}$ $=$ 65 nm. (a) Device #1. (b) Device #2.

Fig7.  The dependence of the relative RTN amplitude on the (a) gate voltage and (b) drain voltage for different trap locations in the channel for the UTBOX SOI nMOSFETs with $W=$ 0.3 $\mu $m $L_{\rm g}$ $=$ 65 nm.

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    Received: 18 March 2015 Revised: Online: Published: 01 September 2015

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      Wen Fang, Eddy Simoen, Chikang Li, Marc Aoulaiche, Jun Luo, Chao Zhao, Cor Claeys. Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs[J]. Journal of Semiconductors, 2015, 36(9): 094005. doi: 10.1088/1674-4926/36/9/094005 ****W Fang, E Simoen, C K Li, M Aoulaiche, J Luo, C Zhao, C Claeys. Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs[J]. J. Semicond., 2015, 36(9): 094005. doi: 10.1088/1674-4926/36/9/094005.
      Citation:
      Wen Fang, Eddy Simoen, Chikang Li, Marc Aoulaiche, Jun Luo, Chao Zhao, Cor Claeys. Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs[J]. Journal of Semiconductors, 2015, 36(9): 094005. doi: 10.1088/1674-4926/36/9/094005 ****
      W Fang, E Simoen, C K Li, M Aoulaiche, J Luo, C Zhao, C Claeys. Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs[J]. J. Semicond., 2015, 36(9): 094005. doi: 10.1088/1674-4926/36/9/094005.

      Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

      DOI: 10.1088/1674-4926/36/9/094005
      • 1.

        IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

      • 2.

        E.E. Depart. KU Leuven, Kasteelpark 10, B-3001 Leuven, Belgium

      • 3.

        Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • 4.

        Graduate Institute of Photonics and Optoelectronics and Department of Electrical, Engineering, National Taiwan University, Taipei 10617, Taiwan, China

      • 5.

        Micron Technology Belgium, IMEC Campus, B-3001 Leuven, Belgium

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      • Corresponding author: Fang Wen, fangwen@ime.ac.cn
      • Received Date: 2015-03-18
      • Accepted Date: 2015-04-27
      • Published Date: 2015-01-25

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