SEMICONDUCTOR PHYSICS
Weiming Lu, Zhigang Wang and Hui Hu
Corresponding author: Lu Weiming, weiming.lu@etsolar.cn
Abstract: We try to find a fast and simple potential induced degradation effect (PID) test procedure for solar cells. With sodium chloride (NaCl) solution as Na+ source, PVB as lamination material, we can carry out the test for solar cells in 1 h. Solar cells with newly developed PID resistance process were also tested. The increase of reverse current of solar cells can be considered a key standard to determine if the solar cell was prone to PID. Moreover, it showed that the increase of reverse current for the PID resistance solar cell was less than 2. In addition, the test results of the solar cells fitted very well with that of the modules by standard procedure.
Key words: crystalline silicon solar cells, potential induced degradation, rapid test
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Table 1. The electrical parameters of the solar cell with silicon nitride layer featuring a refraction index of 2.08 before and after the test.
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Table 2. The electrical parameters of the solar cell with silicon nitride layer featuring a refraction index of 2.12 before and after the test.
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Table 3. Electrical parameters of the solar cell with silicon nitride layer featuring a refraction index of 2.14 before and after the test.
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Table 4. Electrical parameter of the solar cell with SiO$_{2}$ film deposited by PECVD before and after the test.
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Table 5. Electrical parameter of the solar cell grown by ozone before and after the test.
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Table 6. Power losses of the modules fabricated by solar cells with various processes after PID test.
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Article views: 3402 Times PDF downloads: 19 Times Cited by: 0 Times
Received: 28 February 2015 Revised: Online: Published: 01 September 2015
| Citation: |
Weiming Lu, Zhigang Wang, Hui Hu. Polarization effects and tests for crystalline silicon solar cells[J]. Journal of Semiconductors, 2015, 36(9): 092002. doi: 10.1088/1674-4926/36/9/092002
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W M Lu, Z G Wang, H Hu. Polarization effects and tests for crystalline silicon solar cells[J]. J. Semicond., 2015, 36(9): 092002. doi: 10.1088/1674-4926/36/9/092002.
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