J. Semicond. > 2015, Volume 36?>?Issue 12?> 123007

SEMICONDUCTOR MATERIALS

Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method

Jian Liu, Shihua Huang and Lü He

+ Author Affiliations

 Corresponding author: Huang Shihua,Email:huangshihua@zjnu.cn

DOI: 10.1088/1674-4926/36/12/123007

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Abstract: Large-scale In2O3 nanotowers with different cross sections were synthesized by a thermal evaporation and oxidation technique using metal as the catalyst. The morphologies and structural characterizations of In2O3 nanotowers are dependent on growth processes, such as different metal(Au, Ag or Sn) catalysts, the relative position of the substrate and evaporation source, growth temperature, gas flow rate, and growth time. In2O3 nanotowers cannot be observed using Sn as the catalyst, which indicates that metal liquid droplets play an important role in the initial stages of the growth of In2O3 nanotowers. The formation of an In2O3 nanotower is attributed to the competitive growth model between a lateral growth controlled by vapor-solid mechanism and an axial vapor-liquid-solid growth mechanism mediated by metal liquid nanodroplets. The synthesized In2O3 nanostructures with novel tower-shaped morphology may have potential applications in optoelectronic devices and gas sensors.

Key words: In2O3 nanotower, metal-catalyzed growth, thermal evaporation and oxidation, VLS growth mechanism



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Fig. 1.  Schematic drawing of the experimental apparatus.

Fig. 2.  SEM images of as-synthesized In2O3 nanotowers with the substrates placed at the (a) upside and (b) downstream of the indium source.

Fig. 3.  XRD pattern of as-synthesized In2O3 nanotowers with the substrates placed at the (a) upside and (b) downstream of the indium source.

Fig. 4.  Raman spectra of as-synthesized In2O3 nanotowers with the substrates placed at the (a) upside and (b) downstream of the indium source.

Fig. 5.  I –V curves of as-synthesized In2O3 nanotowers with the substrates placed at the (a) upside and (b) downstream of the indium source.

Fig. 6.  The room temperature photoluminescence spectra of the assynthesized In2O3 nanotowers with the substrates placed at the (a) upside and (b) downstream of the indium source.

Fig. 7.  SEM images of In2O3 nanotowers synthesized under different growth temperatures, N2 flow rates and growth times. (a) 1000 ℃, 200 sccm, 60 min. (b) 1100 ℃, 200 sccm, 60 min. (c) 1000 ℃, 100 sccm, 60 min. (d) 1000 ℃, 50 sccm, 60 min. (e) 1000 ℃, 200 sccm, 5 min. (f) 1000 ℃, 200 sccm, 15 min.

Fig. 8.  SEM images of In2O3 nanostructures grown with (a) Ag catalyst and (b) Sn catalyst.

Fig. 9.  Schematic illustration for the growth mechanism of In2O3 nanotowers I and II.

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    Received: 28 May 2015 Revised: Online: Published: 01 December 2015

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      Jian Liu, Shihua Huang, Lü He. Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method[J]. Journal of Semiconductors, 2015, 36(12): 123007. doi: 10.1088/1674-4926/36/12/123007 ****J Liu, S H Huang, L He. Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method[J]. J. Semicond., 2015, 36(12): 123007. doi: 10.1088/1674-4926/36/12/123007.
      Citation:
      Jian Liu, Shihua Huang, Lü He. Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method[J]. Journal of Semiconductors, 2015, 36(12): 123007. doi: 10.1088/1674-4926/36/12/123007 ****
      J Liu, S H Huang, L He. Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method[J]. J. Semicond., 2015, 36(12): 123007. doi: 10.1088/1674-4926/36/12/123007.

      Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method

      DOI: 10.1088/1674-4926/36/12/123007

      • Physics Department, Zhejiang Normal University, Zhejiang 321004, China

      Funds:

      Project supported by the National Natural Science Foundation of China(No. 61076055), the Open Project Program of Surface Physics Laboratory(National Key Laboratory) of Fudan University(No. KF2015_02), the Zhejiang Provincial Science and Technology Key Innovation Team(No. 2011R50012), and the Zhejiang Provincial Key Laboratory(No. 2013E10022).

      More Information
      • Corresponding author: Huang Shihua,Email:huangshihua@zjnu.cn
      • Received Date: 2015-05-28
      • Accepted Date: 2015-06-27
      • Published Date: 2015-01-25

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