J. Semicond. > 2015, Volume 36?>?Issue 12?> 123003

SEMICONDUCTOR MATERIALS

Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

Cholho Jang1, 2, Zhizhen Ye1, and Jianguo Lü1

+ Author Affiliations

 Corresponding author: Ye Zhizhen,Email:yezz@zju.edu.cn

DOI: 10.1088/1674-4926/36/12/123003

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Abstract: Ga doped ZnO(GZO)/Cu grid double layer structures were prepared at room temperature(RT). We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit(ΦTC=6.19×10-3 Ω-1) was obtained. In this case, the transmittance, resistivity and filling factor(FF) of the GZO/Cu grid double layer are 83.74%, 1.10×10-4 Ω·cm and 0.173, respectively.

Key words: transparent electrode, electron beam evaporation, Cu grid, Ga doped ZnO



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Fig1.  (a) Optical microscopic images of the GZO/Cu grid double layer with various Cu grid spacing distances. (b) TEM cross sectional image of the GZO/Cu grid double layer.

Fig2.  (Color online) Average transmittance (inset: transmittance spectra) of the GZO/Cu grid double layer with various Cu grid spacing distances.

圖 3.  (Color online) Average transmittance (inset: transmittance spectra) of the GZO/Cu grid double layer with various Cu grid spacing distances.

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Fig4.  (Color online) Calculated and observed values for average transmittances and sheet resistances of GZO/Cu grid double layer with various Cu grid spacing distances.

Fig5.  Figure of merit of the GZO/Cu grid double layer with various Cu grid spacing distances.

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    Received: 05 May 2015 Revised: Online: Published: 01 December 2015

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      Cholho Jang, Zhizhen Ye, Jianguo Lü. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature[J]. Journal of Semiconductors, 2015, 36(12): 123003. doi: 10.1088/1674-4926/36/12/123003 ****C Jang, Z Z Ye, J Lü. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature[J]. J. Semicond., 2015, 36(12): 123003. doi: 10.1088/1674-4926/36/12/123003.
      Citation:
      Cholho Jang, Zhizhen Ye, Jianguo Lü. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature[J]. Journal of Semiconductors, 2015, 36(12): 123003. doi: 10.1088/1674-4926/36/12/123003 ****
      C Jang, Z Z Ye, J Lü. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature[J]. J. Semicond., 2015, 36(12): 123003. doi: 10.1088/1674-4926/36/12/123003.

      Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

      DOI: 10.1088/1674-4926/36/12/123003

      • State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

      Funds:

      Project supported by the Key Project of the National Natural Science Foundation of China(No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China(No. IRT13037), the National Natural Science Foundation of China(No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China(No. 2010R50020).

      More Information
      • Corresponding author: Ye Zhizhen,Email:yezz@zju.edu.cn
      • Received Date: 2015-05-05
      • Accepted Date: 2015-06-14
      • Published Date: 2015-01-25

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