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J. Semicond. > 2008, Volume 29?>?Issue 2?> 256-261

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An 80dB Dynamic Range ΣΔ Modulator for Low-IF GSM Receivers

Yang Pei, Yin Xiumei and Yang Huazhong

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Abstract: A high-resolution, 200kHz signal bandwidth, third-order single-loop single-bit ΣΔ modulator used in low-IF GSM receivers is presented.The modulator is implemented with fully differential switched capacitor circuits in standard 0.6μm 2P2M CMOS technology.The modulator uses two balanced reference voltages of ±1V, and is driven by a single 26MHz clock signal.The measurement results show that, with an oversampling ratio of 64, the modulator achieves an 80.6dB dynamic range, a 71.8dB peak SNDR, and a 73.9dB peak SNR in the signal bandwidth of 200kHz.The modulator dissipates 15mW static power from a single 5V supply.

Key words: sigma-delta modulator, analog-to-digital conversion, switched-capacitor, operational amplifiers

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    Received: 18 August 2015 Revised: 15 October 2007 Online: Published: 01 February 2008

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      Yang Pei, Yin Xiumei, Yang Huazhong. An 80dB Dynamic Range ΣΔ Modulator for Low-IF GSM Receivers[J]. Journal of Semiconductors, 2008, 29(2): 256-261. ****Yang P, Yin X M, Yang H Z. An 80dB Dynamic Range ΣΔ Modulator for Low-IF GSM Receivers[J]. J. Semicond., 2008, 29(2): 256.
      Citation:
      Yang Pei, Yin Xiumei, Yang Huazhong. An 80dB Dynamic Range ΣΔ Modulator for Low-IF GSM Receivers[J]. Journal of Semiconductors, 2008, 29(2): 256-261. ****
      Yang P, Yin X M, Yang H Z. An 80dB Dynamic Range ΣΔ Modulator for Low-IF GSM Receivers[J]. J. Semicond., 2008, 29(2): 256.

      An 80dB Dynamic Range ΣΔ Modulator for Low-IF GSM Receivers

      • Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

      • Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

      • Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-08
      • Revised Date: 2007-10-15
      • Published Date: 2008-01-31

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