Abstract: The total dose irradiation effects under different bias configurations for fully-depleted (FD) silicon on insulator (SOI) devices are investigated,especially the influence on device performance from radiation-induced trapped-charges.The simulation results show that distribution of the electrical field is strongly dependent on the bias configuration.Moreover,the generation of trapped-charges is related to the electrical field.The variation of the electrical field distribution leads to the variation of trapped-charge distribution,which in turn results in the variation of device performance.Among the three different bias configurations,the OFF state has the highest density of trapped-charges and corresponds to the largest drift of threshold-voltage and leakage current of the front-gate transistor.

Key words: SOI, fully-depleted, total dose irradiation, device simulation