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Abstract: A novel storage cell is proposed.Its structure is similar to Whitaker’s cell,but four transistors are added to avoid voltage degradation.SPICE simulation results show that its static current drops dramatically compared with Whitaker’s cell,and the write speed is equivalent to that of other cells.No upset occurs when Au ions with an LET of 94MeV/ (mg·cm2) impacts by DESSIS and SPICE mix simulation.
Key words: SEU, hardening by design, storage cell
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Received: 18 August 2015 Revised: 07 November 2006 Online: Published: 01 May 2007
| Citation: |
Liu Biwei, Chen Shuming, Liang Bin. A Novel Low Power SEU Hardened Storage Cell[J]. Journal of Semiconductors, 2007, 28(5): 755-758.
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Liu B W, Chen S M, Liang B. A Novel Low Power SEU Hardened Storage Cell[J]. Chin. J. Semicond., 2007, 28(5): 755.
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