Abstract: High-power ridge-waveguide tapered diode lasers at 14xx nm are designed theoretically.InGaAsP/InP-based diode lasers with compressively strained quantum wells and wavelengths around 14xx nm are grown by MOCVD.Cavity-spoiling grooves are etched down through the active region to prevent a direct feedback path between the front and rear facets outside of the ridge region.Lasers with a total length L=1900μm and different ridge waveguide lengths LRW are processed to study the influence of the straight section on the spatial mode filtering.The devices have optimized characteristic parameters and excellent beam quality when the ridge waveguide length is 700μm and the output power is 1.21W.Lasers with LRW=700μm and different taper lengths L taper are also processed to study the influence of the taper section on Ith,Es,Pmax,and the spatial mode filtering.The optimized devices have better characteristic parameters and excellent beam quality with a taper length of 1000μm.

Key words: high-power, tapered diode lasers, ridge waveguide 14xx nm, InGaAsP/InP,  InGaAsP/InP