Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 104-107

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Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED

Wang Xiaohua, Zhan Wang and Liu Guojun

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Abstract: High efficiency output of a violet LED is obtained by increasing the growth temperature of InGaN quantum wells,reducing the intermingling efficiency of In content,and improving the quality of InGaN/GaN.High-resolution X-ray double crystal diffraction and a scanning tube microscope are used to characterize the configuration and optical characteristics of InGaN/GaN MQW grown at high temperatures.The output power of a packaged 300μm×300μm LED is 5.2mW under a 20mA input current,the output wavelength is 408nm.

Key words: quantum well,  GaN,  LED

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    Received: 18 August 2015 Revised: 29 August 2006 Online: Published: 01 January 2007

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      Wang Xiaohua, Zhan Wang, Liu Guojun. Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED[J]. Journal of Semiconductors, 2007, 28(1): 104-107. ****Wang X H, Zhan W, Liu G J. Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED[J]. Chin. J. Semicond., 2007, 28(1): 104.
      Citation:
      Wang Xiaohua, Zhan Wang, Liu Guojun. Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED[J]. Journal of Semiconductors, 2007, 28(1): 104-107. ****
      Wang X H, Zhan W, Liu G J. Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED[J]. Chin. J. Semicond., 2007, 28(1): 104.

      Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED

      • State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-06-20
      • Revised Date: 2006-08-29
      • Published Date: 2006-12-26

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