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Abstract: A monolithic single pole single throw (SPST) switch is developed with GaAs PIN diode technology from IMECAS.A novel small signal model of a GaAs PIN diode is developed for circuit simulation.The switch features an on-state insertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greater than 23dB from 5.5 to 7.5GHz.The measured 1dB power gain compression point is about 20dBm.
Key words: C-band, SPST, switches, GaAs, PIN diodes
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Received: 18 August 2015 Revised: 16 December 2007 Online: Published: 01 May 2008
| Citation: |
Wu Rufei, Zhang Jian, Yin Junjian, Zhang Haiying. A C-Band Monolithic GaAs PIN Diode SPST Switch[J]. Journal of Semiconductors, 2008, 29(5): 879-882.
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Wu R F, Zhang J, Yin J J, Zhang H Y. A C-Band Monolithic GaAs PIN Diode SPST Switch[J]. J. Semicond., 2008, 29(5): 879.
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