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Abstract: This paper presents an optimized SRAM that is repairable and dissipates less power.To improve the yield of SRAMs per wafer,redundancy logic and an E-FUSE box are added to the SRAM and an SR SRAM is set up.In order to reduce power dissipation,power on/off states and isolation logic are introduced into the SR SRAM and an LPSR SRAM is constructed.The optimized LPSR SRAM64K×32 is used in SoC and the testing method of the LPSR SRAM64K×32 is also discussed.The SoC design is successfully implemented in the Chartered 90nm CMOS process.The SoC chip occupies 56mm×56mm of die area and the power dissipation is 1997mW.The test results indicate that LPSR SRAM64K×32 obtains 17301% power savings and the yield of the LPSR SRAM64K×32s per wafer is improved by 13255%.
Key words: optimization, LPSR SRAM, redundancy logic, power on/off states
Article views: 4034 Times PDF downloads: 1292 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 08 January 2008 Online: Published: 01 May 2008
| Citation: |
Zhou Qingjun, Liu Hongxia. Optimization and Application of SRAM in 90nm CMOS Technology[J]. Journal of Semiconductors, 2008, 29(5): 883-888.
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Zhou Q J, Liu H X. Optimization and Application of SRAM in 90nm CMOS Technology[J]. J. Semicond., 2008, 29(5): 883.
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