Abstract: We transfer GaN based LED epitaxial materials grown on a Si substrate to a new Si substrate and fabricate flip blue LED chips.Photoelectric properties of these chips with different n-electrode etching depths are researched.An accelerated aging experiment on a testing board is studied under a high driven current of 500mA for the chips of 200μm×200μm before incised.The results show that the chips with 0.8 and 1.2μm etching depths have lower forward voltage and slower light decay than the chips with 0.5μm etching depth.Meanwhile,the ESD is relatively steadier with aging time.Additionally,the ESD of chips with 0.8μm etching depth is larger than the chips with 1.2μm.

Key words: blue LED, GaN, Si substrate, accelerated aging, etching, electrostatic discharge