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J. Semicond. > 2008, Volume 29?>?Issue 4?> 770-773

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Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals

Lü Jin, Chen Yubin, Zuo Zheng, Shi Yi, Pu Lin and Zheng Youdou

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Abstract: Gradual Ge1-xSix/Si hetero-nanocrystals on ultrathin SiO2 layers were fabricated by combining self-assembled growth and the selective chemical etching method.Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1-xSix/Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage (C-V) and capacitance-time (C-t) measurements.The findings indicate that holes reach a longer retention time in gradual Ge1-xSix/Si hetero-nanocrystals,which can be attributed to the holes trapped solidly on the side of the higher valence band of the compound potential barrier caused by the offset between Ge and Si.

Key words: hetero-nanocrystals, nonvolatile floating-gate memory, capacitance-voltage measurement, self-assembled growth, selective chemical etching

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    Received: 18 August 2015 Revised: 26 October 2007 Online: Published: 01 April 2008

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      Lü Jin, Chen Yubin, Zuo Zheng, Shi Yi, Pu Lin, Zheng Youdou. Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals[J]. Journal of Semiconductors, 2008, 29(4): 770-773. ****Lü J, Chen Y B, Zuo Z, Shi Y, Pu L, Zheng Y D. Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals[J]. J. Semicond., 2008, 29(4): 770.
      Citation:
      Lü Jin, Chen Yubin, Zuo Zheng, Shi Yi, Pu Lin, Zheng Youdou. Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals[J]. Journal of Semiconductors, 2008, 29(4): 770-773. ****
      Lü J, Chen Y B, Zuo Z, Shi Y, Pu L, Zheng Y D. Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals[J]. J. Semicond., 2008, 29(4): 770.

      Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals

      • National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China

      • National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China

      • National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China

      • National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China

      • National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China

      • National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-16
      • Revised Date: 2007-10-26
      • Published Date: 2008-04-03

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