Abstract: A Ta-N thin film resistor was integrated in anodic alumina MCM-D substrate using RF reactive sputtering.The effects of the aluminum anodization process on the microstructure of the Ta-N resistor were studied.The results show that the oxide bulges composed of Ta2O5 and Ta-O-N were formed at the surface of Ta-N film due to the effect of the upper layer of porous anodic alumina.The oxide bulge thickness was related to the anodiztion voltage.The resistivity and TCR of the remaining Ta-N resistor remained unchanged.The resistor was more stable because of the protection of the oxide bulges.

Key words: anodization, Ta-N thin film resistor, electrical property, microstructure