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J. Semicond. > 2008, Volume 29?>?Issue 3?> 458-460

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A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs

Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong and Sun Ming

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Abstract: We investigate the effects of the surface states on the Schottky contacts in 4H-SiC MESFET.The Ti/Pt/Au gate metal contacts are deposited by electron beam evaporation and patterned by a lift-off process.Based on thermionic theory,a simple parameter extraction method is developed for determination of the surface states in metal/4H-SiC Schottky contacts.The interface state density and interface capacitance are calculated to be 4.386e13cm-2·eV-1 and 6.394e-6F/cm2,which are consistent with the device’s terminal characteristics.

Key words: silicon carbide, Schottky contact, surface states, device modeling.

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    Received: 18 August 2015 Revised: 19 November 2007 Online: Published: 01 March 2008

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      Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Sun Ming. A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs[J]. Journal of Semiconductors, 2008, 29(3): 458-460. ****Lü H, Zhang Y M, Zhang Y M, Che Y, Sun M. A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs[J]. J. Semicond., 2008, 29(3): 458.
      Citation:
      Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Sun Ming. A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs[J]. Journal of Semiconductors, 2008, 29(3): 458-460. ****
      Lü H, Zhang Y M, Zhang Y M, Che Y, Sun M. A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs[J]. J. Semicond., 2008, 29(3): 458.

      A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Engineering College of Armed Police Force,Xi'an 710086,China

      • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-30
      • Revised Date: 2007-11-19
      • Published Date: 2008-02-28

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