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J. Semicond. > 2008, Volume 29?>?Issue 3?> 461-466

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Mechanism of Reverse Snapback on I-VCharacteristics of Power SITHs with Buried Gate Structure

Wang Yongshun, Li Hairong, Wu Rong and Li Siyuan

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Abstract: The reverse snapback phenomena (RSP) on I-V characteristics of static induction thyristors (SITH) are physically researched.The I-Vcurves of the power SITH exhibit reverse snapback phenomena,and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value.The RSP I-Vcharacteristics of the power SITH are analyzed in terms of operating mechanism,double carrier injection effect,space charge effect,electron-hole plasma in the channel,and the variation in carrier lifetime.The reverse snapback mechanism is theoretically proposed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented.The computing results are compared with the experiment values.

Key words: power static induction thyristor, reverse snapback, electron-hole plasma, lifetime, injection level

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    Received: 18 August 2015 Revised: 20 September 2007 Online: Published: 01 March 2008

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      Wang Yongshun, Li Hairong, Wu Rong, Li Siyuan. Mechanism of Reverse Snapback on I-VCharacteristics of Power SITHs with Buried Gate Structure[J]. Journal of Semiconductors, 2008, 29(3): 461-466. ****Wang Y S, Li H R, Wu R, Li S Y. Mechanism of Reverse Snapback on I-VCharacteristics of Power SITHs with Buried Gate Structure[J]. J. Semicond., 2008, 29(3): 461.
      Citation:
      Wang Yongshun, Li Hairong, Wu Rong, Li Siyuan. Mechanism of Reverse Snapback on I-VCharacteristics of Power SITHs with Buried Gate Structure[J]. Journal of Semiconductors, 2008, 29(3): 461-466. ****
      Wang Y S, Li H R, Wu R, Li S Y. Mechanism of Reverse Snapback on I-VCharacteristics of Power SITHs with Buried Gate Structure[J]. J. Semicond., 2008, 29(3): 461.

      Mechanism of Reverse Snapback on I-VCharacteristics of Power SITHs with Buried Gate Structure

      • College of Electronic and Information Engineering,Lanzhou Jiaotong University, Lanzhou 730070,China

      • Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • College of Electronic and Information Engineering,Lanzhou Jiaotong University, Lanzhou 730070,China

      • Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-20
      • Revised Date: 2007-09-20
      • Published Date: 2008-02-28

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