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Chin. J. Semicond. > 1994, Volume 15?>?Issue 3?> 180-187

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適用于寬溫度范圍和不同溝遭摻雜濃度的MOSFET反型層載流子遷移率模型

黃驍虎，阮剛

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    Received: 18 August 2015 Revised: Online: Published: 01 March 1994

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      黃驍虎，阮剛. 適用于寬溫度范圍和不同溝遭摻雜濃度的MOSFET反型層載流子遷移率模型[J]. 半導(dǎo)體學(xué)報(bào)(英文版), 1994, 15(3): 180-187.
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      黃驍虎，阮剛. 適用于寬溫度范圍和不同溝遭摻雜濃度的MOSFET反型層載流子遷移率模型[J]. 半導(dǎo)體學(xué)報(bào)(英文版), 1994, 15(3): 180-187.

      • Received Date: 2015-08-18

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