Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 1949-1951

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A 5.1W/mm Power Density GaN HEMT on Si Substrate

Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, Mo Jianghui, Zhang Zhiguo, Wang Yong, Feng Zhen, Li Xiaobai, Yang Kewu and Cai Shujun

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Abstract: High quality GaN HEMT materials were grown on Si (111) substrates by MOCVD.The FWHM of the XRD (002) rocking curve of the 1mm-thick GaN epilayer is 573" ,and the (102) is 668" .2μm-thick crack-free GaN HEMT materials were achieved by the interlayer technique.The RT 2DEG mobility is 1350cm2/(V·s) with a sheet resistance of 328Ω/□.The DC and RF characteristics of a GaN microwave power device with a 1mm gate width were probed.The saturated drain current density is around 0.8A/mm,and the peak transconductance is beyond 250mS/mm.Tuning for a maximum output power of 5.1W at 2GHz,a gain of 9.1dB,and a peak power-added efficiency of 35% was obtained.

Key words: Si substrate, GaN HEMT, FWHM of XRD, 2DEG mobility, power density

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    Received: 18 August 2015 Revised: 28 June 2007 Online: Published: 01 December 2007

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      Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, Mo Jianghui, Zhang Zhiguo, Wang Yong, Feng Zhen, Li Xiaobai, Yang Kewu, Cai Shujun. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Journal of Semiconductors, 2007, 28(12): 1949-1951. ****Feng Z H, Yin J Y, Yuan F P, Liu B, Liang D, Mo J H, Zhang Z G, Wang Y, Feng Z, Li X B, Yang K W, Cai S J. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Chin. J. Semicond., 2007, 28(12): 1949.
      Citation:
      Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, Mo Jianghui, Zhang Zhiguo, Wang Yong, Feng Zhen, Li Xiaobai, Yang Kewu, Cai Shujun. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Journal of Semiconductors, 2007, 28(12): 1949-1951. ****
      Feng Z H, Yin J Y, Yuan F P, Liu B, Liang D, Mo J H, Zhang Z G, Wang Y, Feng Z, Li X B, Yang K W, Cai S J. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Chin. J. Semicond., 2007, 28(12): 1949.

      A 5.1W/mm Power Density GaN HEMT on Si Substrate

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-30
      • Revised Date: 2007-06-28
      • Published Date: 2007-11-28

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