Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 1945-1948

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Fabrication of a High-Performance RTD on InP Substrate

Qi Haitao, Feng Zhen, Li Yali, Zhang Xiongwen, Shang Yaohui and Guo Weilian

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Abstract: InGaAs/AlAs RTD material structure on InP substrate is designed and grown by molecular beam epitaxy.A device with good negative differential resistance characteristics and a higher resistive cutoff frequency is fabricated using mesa isolation,metal lift-off,wet chemical etch,and air bridge technologies.The forward bias peak-to-valley current ratio (PVCR) and reverse bias PVCR are about 17.5 and 28,respectively.The peak current density is 56kA/cm2,and the data fitting resistive cutoff frequency using an RNC circuit model is 82.8GHz.The experiment lays a foundation for the design and fabrication of high-performance RTD and monolithic integration circuits of RTD and other high speed and high frequency three terminal devices.

Key words: resonant tunneling diode, InP, negative differential resistance, resistive cutoff frequency

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    Received: 18 August 2015 Revised: 06 July 2007 Online: Published: 01 December 2007

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      Qi Haitao, Feng Zhen, Li Yali, Zhang Xiongwen, Shang Yaohui, Guo Weilian. Fabrication of a High-Performance RTD on InP Substrate[J]. Journal of Semiconductors, 2007, 28(12): 1945-1948. ****Qi H T, Feng Z, Li Y L, Zhang X, Shang Y H, Guo W L. Fabrication of a High-Performance RTD on InP Substrate[J]. Chin. J. Semicond., 2007, 28(12): 1945.
      Citation:
      Qi Haitao, Feng Zhen, Li Yali, Zhang Xiongwen, Shang Yaohui, Guo Weilian. Fabrication of a High-Performance RTD on InP Substrate[J]. Journal of Semiconductors, 2007, 28(12): 1945-1948. ****
      Qi H T, Feng Z, Li Y L, Zhang X, Shang Y H, Guo W L. Fabrication of a High-Performance RTD on InP Substrate[J]. Chin. J. Semicond., 2007, 28(12): 1945.

      Fabrication of a High-Performance RTD on InP Substrate

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • The 13th Research Institute,CETC,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-21
      • Revised Date: 2007-07-06
      • Published Date: 2007-11-28

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