Abstract: Partially-depleted silicon-on-insulator(PDSOI)floating-body(FB)nMOSFETs and H-gate type body-contacted(BC)nMOSFETs are fabricated with different back channel implantation dosages.The off-state breakdown characteristics of these devices are presented.The off-state breakdown voltages of the FB nMOSFETs increase from 5.2 to 6.7V,and those of the H-gate type BC nMOSFETs decrease from 11.9 to 9V as the back channel implantation dosages increase from 1.0e13 to 1.3e13cm-2.By measuring the parasitic bipolar transistor static gain and the breakdown characteristics of the pn junction between the drain and the body,the differences between the breakdown mechanisms of the FB and H-gate type BC nMOSFETs are analyzed and explained qualitatively.

Key words: PDSOI, breakdown, back channel implantation