Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 10-13

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Fabrication of SiC MESFETs for Microwave Power Applications

Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, Jiang Youquan, Han Chunlin and Chen Chen

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Abstract: 4H-SiC MESFETs are fabricated on semi-insulating SiC substrates.Key processes are optimized to obtain better device performance.A microwave power amplifier is demonstrated from a 1mm SiC MESFET for S band operation.When operated at a drain voltage of 64V,the amplifier shows an output power of 4.09W,a gain of 9.3dB,and a power added efficiency of 31.3%.

Key words: 4H-SiC, MESFET, microwave, power amplifier

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    Article views: 4129 Times PDF downloads: 1598 Times Cited by: 0 Times

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    Received: 18 August 2015 Revised: 23 August 2006 Online: Published: 01 January 2007

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      Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, Jiang Youquan, Han Chunlin, Chen Chen. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Journal of Semiconductors, 2007, 28(1): 10-13. ****Bai S, Chen G, Zhang T, Li Z Y, Wang H, Jiang Y Q, Han C L, Chen C. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Chin. J. Semicond., 2007, 28(1): 10.
      Citation:
      Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, Jiang Youquan, Han Chunlin, Chen Chen. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Journal of Semiconductors, 2007, 28(1): 10-13. ****
      Bai S, Chen G, Zhang T, Li Z Y, Wang H, Jiang Y Q, Han C L, Chen C. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Chin. J. Semicond., 2007, 28(1): 10.

      Fabrication of SiC MESFETs for Microwave Power Applications

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-26
      • Revised Date: 2006-08-23
      • Published Date: 2006-12-26

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