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J. Semicond. > 2008, Volume 29?>?Issue 4?> 628-636

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Emerging Challenges in ESD Protection for RF ICs in CMOS

Wang Albert, Lin Lin, Wang Xin, Liu Hainan and Zhou Yumei

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Abstract: On-chip electrostatic discharge (ESD) protection design has become an emerging challenge for radio-frequency (RF) integrated circuits (IC) design as IC technologies migrate into the very-deep-sub-micron (VDSM) regime and RF ICs move into multi-GHz operations.The key problem originates from the complex interaction between the ESD protection circuitry and the core RF IC circuit under protection.This paper discusses the recent development in RF ESD protection research and design,outlining emerging challenges,new design methods,and novel RF ESD protection solutions.

Key words: electrostatic discharge, ESD protection, RF ESD, parasitic

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    Received: 18 August 2015 Revised: 04 December 2007 Online: Published: 01 April 2008

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      Wang Albert, Lin Lin, Wang Xin, Liu Hainan, Zhou Yumei. Emerging Challenges in ESD Protection for RF ICs in CMOS[J]. Journal of Semiconductors, 2008, 29(4): 628-636. ****Wang A, Lin L, Wang X, Liu H N, Zhou Y M. Emerging Challenges in ESD Protection for RF ICs in CMOS[J]. J. Semicond., 2008, 29(4): 628.
      Citation:
      Wang Albert, Lin Lin, Wang Xin, Liu Hainan, Zhou Yumei. Emerging Challenges in ESD Protection for RF ICs in CMOS[J]. Journal of Semiconductors, 2008, 29(4): 628-636. ****
      Wang A, Lin L, Wang X, Liu H N, Zhou Y M. Emerging Challenges in ESD Protection for RF ICs in CMOS[J]. J. Semicond., 2008, 29(4): 628.

      Emerging Challenges in ESD Protection for RF ICs in CMOS

      • Department of Electrical Engineering,University of California,Riverside,CA 92521,USA

      • Department of Electrical Engineering,University of California,Riverside,CA 92521,USA

      • Department of Electrical Engineering,University of California,Riverside,CA 92521,USA

      • Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-20
      • Revised Date: 2007-12-04
      • Published Date: 2008-04-03

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