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J. Semicond. > 2008, Volume 29?>?Issue 4?> 637-640

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Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

Guo Hui, Feng Qian, Tang Xiaoyan, Zhang Yimen and Zhang Yuming

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Abstract: Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated.TLM (transfer length method) test patterns with polysilicon structure are formed on n-wells created by phosphorus ion (P+) implantation into a Si-faced p-type 4H-SiC epilayer.The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□.The specific contact resistance ρc of n+ polysilicon contact to n-type 4H-SiC as low as 3.82×10-5Ω·cm2 is achieved.The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□.The mechanisms for n+ polysilicon ohmic contact to n-type SiC are discussed.

Key words: ohmic contact, silicon carbide, polysilicon, specific contact resistance, P+ ion implantation

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    Received: 18 August 2015 Revised: 16 November 2007 Online: Published: 01 April 2008

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      Guo Hui, Feng Qian, Tang Xiaoyan, Zhang Yimen, Zhang Yuming. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide[J]. Journal of Semiconductors, 2008, 29(4): 637-640. ****Guo H, Feng Q, Tang X Y, Zhang Y M, Zhang Y M. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide[J]. J. Semicond., 2008, 29(4): 637.
      Citation:
      Guo Hui, Feng Qian, Tang Xiaoyan, Zhang Yimen, Zhang Yuming. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide[J]. Journal of Semiconductors, 2008, 29(4): 637-640. ****
      Guo H, Feng Q, Tang X Y, Zhang Y M, Zhang Y M. Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide[J]. J. Semicond., 2008, 29(4): 637.

      Fabrication of n+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics School,Xidian University,Xi'an 710071,China

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics School,Xidian University,Xi'an 710071,China

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics School,Xidian University,Xi'an 710071,China

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics School,Xidian University,Xi'an 710071,China

      • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics School,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-19
      • Revised Date: 2007-11-16
      • Published Date: 2008-04-03

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