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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1843-1846

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RLC Interconnect Delay with Temperature Distribution Effects

Yang Yintang, Leng Peng, Dong Gang and Chai Changchun

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Abstract: Based on the equivalent Elmore delay and the concept of piecewise distributed parameters,an analytical model of RLC interconnect delay is presented.In this model,the influence of inductance and temperature is taken into account,which is close to the fact and of great importance in practice.Results show that the proposed model has less than 10% error for simple RLC interconnect trees and is very high in simulation efficiency.

Key words: delay, temperature distribution, RLC interconnect

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    Received: 18 August 2015 Revised: 17 April 2008 Online: Published: 01 September 2008

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      Yang Yintang, Leng Peng, Dong Gang, Chai Changchun. RLC Interconnect Delay with Temperature Distribution Effects[J]. Journal of Semiconductors, 2008, 29(9): 1843-1846. ****Yang Y T, Leng P, Dong G, Chai C C. RLC Interconnect Delay with Temperature Distribution Effects[J]. J. Semicond., 2008, 29(9): 1843.
      Citation:
      Yang Yintang, Leng Peng, Dong Gang, Chai Changchun. RLC Interconnect Delay with Temperature Distribution Effects[J]. Journal of Semiconductors, 2008, 29(9): 1843-1846. ****
      Yang Y T, Leng P, Dong G, Chai C C. RLC Interconnect Delay with Temperature Distribution Effects[J]. J. Semicond., 2008, 29(9): 1843.

      RLC Interconnect Delay with Temperature Distribution Effects

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-22
      • Revised Date: 2008-04-17
      • Published Date: 2008-09-03

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