Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 117-121

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Design and Analysis of a Long Wavelength MOEMS Tunable Filter

Wu Xuming, Wang Xiaodong, He Guorong, Wang Qing, Cao Yulian and Tan Manqing

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Abstract: A novel MOEMS tunable filter is proposed. We choose GaAs/AlGaAs as the bottom distributed Bragg reflector (DBR),GaAs and SiO2/Si as the top DBR,and air as the cavity. Parameters of the device,such as the FWHM,transmittance,tuning deflection,and tuning velocity,are analyzed theoretically according to the demand of the WDM system. The influences of the depth h,width b,and length L on tuning deflection and tuning velocity are investigated in detail. The tuning deflection increases with the increase of L and decreases with the increase of h and b,while the tuning velocity behaves in the opposite way.

Key words: MOEMS,  tunable,  filter

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    Received: 18 August 2015 Revised: 24 September 2006 Online: Published: 01 January 2007

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      Wu Xuming, Wang Xiaodong, He Guorong, Wang Qing, Cao Yulian, Tan Manqing. Design and Analysis of a Long Wavelength MOEMS Tunable Filter[J]. Journal of Semiconductors, 2007, 28(1): 117-121. ****Wu X M, Wang X D, He G R, Wang Q, Cao Y L, Tan M Q. Design and Analysis of a Long Wavelength MOEMS Tunable Filter[J]. Chin. J. Semicond., 2007, 28(1): 117.
      Citation:
      Wu Xuming, Wang Xiaodong, He Guorong, Wang Qing, Cao Yulian, Tan Manqing. Design and Analysis of a Long Wavelength MOEMS Tunable Filter[J]. Journal of Semiconductors, 2007, 28(1): 117-121. ****
      Wu X M, Wang X D, He G R, Wang Q, Cao Y L, Tan M Q. Design and Analysis of a Long Wavelength MOEMS Tunable Filter[J]. Chin. J. Semicond., 2007, 28(1): 117.

      Design and Analysis of a Long Wavelength MOEMS Tunable Filter

      • Center of Optoelectronics Research and Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Center of Optoelectronics Research and Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Laboratory of Nano-Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Laboratory of Nano-Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Laboratory of Nano-Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Center of Optoelectronics Research and Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-04-20
      • Revised Date: 2006-09-24
      • Published Date: 2006-12-26

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