Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 122-126

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Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, Wu Xiaoli and Gong Haimei

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Abstract: Surface damage on InGaAs,n-InP,and p-InP after Ar+ etching is studied,and it is removed by wet etching post treatments.After Ar+ etching,the root-mean-square roughness of InGaAs surface is lower,but the roughness of n-InP and p-InP surfaces is significantly higher.The photoluminescence (PL) intensity of Ar+-etched InGaAs increases,but those of Ar+-etched n-InP and p-InP decreases.X-ray photoelectron spectroscopy (XPS) is used to investigate the atomic concentration of three samples before Ar+ etching and after Ar+ etching and wet etching post treatments.After Ar+ etching,the content of In and Ga at the InGaAs surface increases markedly,and there is generally a preferential loss of P from n-InP and p-InP surfaces.The surface atomic concentration of the samples after wet etching is almost the same as before Ar+ etching.

Key words: Ar+ etching, InGaAs, InP, wet etching, surface damage

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    Received: 18 August 2015 Revised: 16 August 2006 Online: Published: 01 January 2007

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      Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, Wu Xiaoli, Gong Haimei. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Journal of Semiconductors, 2007, 28(1): 122-126. ****Lü Y, Yue F Y, Hong X K, Chen J F, Han B, Wu X L, Gong H M. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Chin. J. Semicond., 2007, 28(1): 122.
      Citation:
      Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, Wu Xiaoli, Gong Haimei. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Journal of Semiconductors, 2007, 28(1): 122-126. ****
      Lü Y, Yue F Y, Hong X K, Chen J F, Han B, Wu X L, Gong H M. Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP[J]. Chin. J. Semicond., 2007, 28(1): 122.

      Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China ；Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-08
      • Revised Date: 2006-08-16
      • Published Date: 2006-12-26

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