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J. Semicond. > 2008, Volume 29?>?Issue 2?> 240-243

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Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC

Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu and Xu Daqing

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Abstract: Deep level transient Fourier spectroscopy (DLTFS) measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation.Two acceptor levels of vanadium at EC-0.81 and EC-1.02eV with the electron capture cross section of 7.0e-16 and 6.0e-16 cm2 are observed, respectively.Low-temperature photoluminescence measurements in the range of 1.4~3.4eV are also performed on the sample, which reveals the formation of two electron traps at 0.80 and 1.16eV below the conduction band.These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC, with the location of 0.8±0.01 and 1.1±0.08eV below the conduction band.

Key words: 4H-SiC, vanadium doping, acceptor level

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    Received: 18 August 2015 Revised: 18 September 2007 Online: Published: 01 February 2008

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      Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu, Xu Daqing. Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC[J]. Journal of Semiconductors, 2008, 29(2): 240-243. ****Wang C, Zhang Y M, Zhang Y M, Wang Y H, Xu D Q. Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC[J]. J. Semicond., 2008, 29(2): 240.
      Citation:
      Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu, Xu Daqing. Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC[J]. Journal of Semiconductors, 2008, 29(2): 240-243. ****
      Wang C, Zhang Y M, Zhang Y M, Wang Y H, Xu D Q. Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC[J]. J. Semicond., 2008, 29(2): 240.

      Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-26
      • Revised Date: 2007-09-18
      • Published Date: 2008-01-31

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