Abstract: We study the problem of multiple node upset (MNU) using three-dimensional device simulation.The results show the transient floating node and charge lateral diffusion are the key reasons for MNU.We compare the MNU with multiple bit upset (MBU), and find that their characteristics are different.Methods to avoid MNU are also discussed.
Key words: multiple node upset, hardened cell, charge collection
Article views: 4094 Times PDF downloads: 1047 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 07 October 2007 Online: Published: 01 February 2008
| Citation: |
Liu Biwei, Hao Yue, Chen Shuming. Multiple Node Upset in SEU Hardened Storage Cells[J]. Journal of Semiconductors, 2008, 29(2): 244-250.
****
Liu B W, Hao Y, Chen S M. Multiple Node Upset in SEU Hardened Storage Cells[J]. J. Semicond., 2008, 29(2): 244.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP備05085259號(hào)-2